Details
Manufacturer No 12N50G-TA3-T
Manufacturer Unisonic Technologies Co Ltd
Category Power Field-Effect Transistors
Datasheet Datasheet
Description Power Field-Effect Transistor, 12A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN
Price
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Type
Parameter
ECCN Code
EAR99
Pin Count
3
Rohs Code
Yes
Popularity
0
Subcategory
FET General Purpose Power
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-220AB
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Part Package Code
TO-220AB
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Description
FLANGE MOUNT, R-PSFM-T3
Part Life Cycle Code
Active
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Reach Compliance Code
compliant
Drain Current-Max (ID)
12 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
500 V
Operating Temperature-Max
150°C
Power Dissipation-Max (Abs)
192 W
Transistor Element Material
SILICON
Drain Current-Max (Abs) (ID)
12 A
Avalanche Energy Rating (Eas)
684 mJ
Peak Reflow Temperature (Cel)
NOTSPECIFIED
Drain-source On Resistance-Max
0.54 Ω
Pulsed Drain Current-Max (IDM)
48 A
Time@Peak Reflow Temperature-Max (s)
NOTSPECIFIED
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Unit Price
Total Price
14587
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